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 STE50DE100
Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026
General features
VCS(ON) 1.3 V
IC 50 A
RCS(ON)
High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kHz Ultra low Ciss Low dynamic VCS(ON)

Applications

Industrial converters Welding
Description
The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.
Order codes
Part Number STE50DE100 Marking STE50DE100 Package ISOTOP Packing Tube
January 2007
W
0.026
Internal schematic diagrams
Rev 2
(R)
ISOTOP
1/11
www.st.com 11
STE50DE100
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) ........................... 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STE50DE100
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot VINS Tstg TJ
Absolute maximum rating
Parameter Collector-source voltage (V BS = VGS = 0 V) Base-source voltage (IC = 0, V GS = 0 V) Source-base voltage (IC = 0, V GS = 0 V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25C Insulation withstand voltage (AC-RMS) from all four leads to external heatsink Storage temperature Max. operating junction temperature Value 1000 40 12 Unit V V V V A A A A W V C C
20
50 150 10 50 160 2500 -40 to 150 150
Table 2.
Symbol Rthj-case Rthc-h
Thermal data
Parameter Thermal resistance junction-case __max Thermal resistance case-heatsink with conductive grease applied __max Value 0.78 0.05 Unit C/W C/W
3/11
Electrical characteristics
STE50DE100
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICS(SS) IBS(OS) ISB(OS)
IGS(OS)
Electrical characteristics
Parameter Collector-source current (VBS = V GS = 0) Base-source current (IC = 0, VGS = 0) Source-base current (IC = 0, VGS = 0) Gate-source leakage Collector-source ON voltage DC current gain Test Conditions VCE = 1000V VBS(OS) = 40V VSB(OS) = 10V VGS = 20V VGS = 10V IC = 50A IB = 10A VGS = 10V_IC = 30A IB = 3A VGS = 10V_IC = 50A VCS = 1V VGS = 10V_IC = 30A VCS = 1V VGS = 10V_ IC = 50A IB = 10A VGS = 10V_ IC = 30A_ IB = 3A VBS = VGS ______IB = 250A VCS = 25V ______f = 1MHz VGS = VCB = 0 VCS = 25V _____VGS = 10V VCB = 0 VClamp = 800V tp = 4s IC = 50A IC = 25A IB = 5A VGS = 10V 3 3 6 2.2 1.4 3.7 2500 4.5 1.3 1.1 7 13 V V V pF Min. Typ. Max. Unit 100 10 100 500 A A A nA V V
VCS(ON) hFE VBS(ON) VGS(th) CISS QGS(tot) ts tf
Base Source ON voltage Gate threshold voltage Input capacitance
Gate-source charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber Collector-source dynamic voltage (500ns) Collector-source dynamic voltage
60
nC
RG = 47
650 10
ns ns
(see figure 13)
ts tf
IC = 25A IB = 2.5A VGS = 10V VClamp = 800V RG = 47 tp = 4s
430 6
ns ns
(see figure 13)
1000
VCSW
RG = 47 hFE = 5A IC = 35A
VCC = VClamp = 300V V GS = 10V RG = 47 IC = 5A IB = 5A IBpeak = IC = 25A RG = 47 tpeak = 500ns IB = 5A VCC = VClamp = 300V V GS = 10V IC = 5A
V
VCS(dyn)
5.5
V
VCS(dyn)
4.8
V
(1 s)
IBpeak = IC = 25A
tpeak = 500ns
4/11
STE50DE100
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1. Output characteristics Figure 2. DC current gain
Figure 3.
Collector-source On voltage
Figure 4.
Collector-source On voltage
Figure 5.
Base-source On voltage
Figure 6.
Base-source On voltage
5/11
Electrical characteristics
STE50DE100
Figure 7.
Reverse biased safe operting Figure 8. area
Gate threshold voltage vs temperature
Figure 9.
Dynamic collector-emitter saturation voltage
Figure 10. Inductive load switching time
Figure 11. Inductive load switching time
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STE50DE100
Electrical characteristics
2.2
Test circuits
Figure 12. Static VCS(ON) test circuit
Figure 13. Inductive load switching and RBSOA test circuit
Figure 14. Inductive load turn-on switching and dynamic V CS(ON) test circuit
7/11
Package mechanical data
STE50DE100
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STE50DE100
Package mechanical data
ISOTOP MECHANICAL DATA
DIM. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 14.9 12.6 3.5 4.1 4.6 4 4 30.1 mm MIN. 11.8 8.9 7.8 0.75 1.95 37.8 31.5 25.15 23.85 24.8 15.1 12.8 4.3 4.3 5 4.3 4.4 30.3 0.586 0.496 0.137 0.161 0.181 0.157 0.157 1.185 TYP. MAX. 12.2 9.1 8.2 0.85 2.05 38.2 31.7 25.5 24.15 MIN. 0.465 0.350 0.307 0.029 0.076 1.488 1.240 0.990 0.938 0.976 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 inch TYP. MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950
P093A
9/11
Revision history
STE50DE100
4
Revision history
Table 4.
Date 06-Oct-2004 22-Jan-2007
Revision history
Revision 1 2 Initial release. The document has been reformatted Changes
10/11
STE50DE100
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